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等离子硅刻蚀及其工艺参数的多尺度优化
投稿时间:2013-06-19  修订日期:2014-03-17  点此下载全文
引用本文:阎军,杨明强,严培.等离子硅刻蚀及其工艺参数的多尺度优化[J].计算机辅助工程,2014,23(5):84-87.
作者单位E-mail
阎军 大连理工大学 工业装备结构分析国家重点实验室 yanjun@dlut.edu.cn 
杨明强 大连理工大学 工业装备结构分析国家重点实验室  
严培 大连理工大学 工业装备结构分析国家重点实验室  
基金项目:国家自然科学基金重点项目(11372060); 国家科技重大专项(2011ZX02403-002);高等学校学科创新引智计划(B14013);中央高校基本科研业务费专项资金(DUT14LK30)
中文摘要:用CFD ACE+和CFD TOPO分别对容性耦合等离子体反应腔室放电和等离子硅刻蚀过程进行仿真,讨论不同射频电压和腔室条件对等离子体特性的影响.结果表明:随着射频电压的升高,离子的通量增大;在低射频电压时,离子通量随腔室压强的升高而减小,而在高射频电压时趋势则相反.用Kriging模型对影响刻蚀形貌的参数(腔室压强和射频电压)进行优化,结果表明该优化方法可以为工艺条件相近的刻蚀机设备的设计提供参考.
中文关键词:硅刻蚀  容性耦合等离子体  射频电压  腔室压强  Kriging模型  优化
 
Plasma silicon etch and multi-scale optimization on process parameters
Abstract:The discharge process in capacitively coupled plasma reaction chamber and the plasma silicon etch process are simulated by CFD ACE+ and CFD TOPO. The effect of different radio frequency voltage and chamber conditions on plasma characteristics are discussed. The results show that, with the increase of radio frequency voltage, the flux of ion increases; the flux of ion decreases with the increase of chamber pressure when the radio frequency voltage is low, but the change trend shows in opposite direction while the radio frequency voltage is high. The Kriging model is used to optimize the parameters such as chamber pressure and ration frequency voltage, which have influences on the etching profile. The result shows that the optimization method is feasible, which can provide reference for the design of the etch device in similar process condition.
keywords:silicon etch  capacitively coupled plasma  radio frequency voltage  chamber press  Kriging model  optimization
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